multiple patterning造句
例句與造句
- Consequently, there are more sources of variations and possible yield loss in multiple patterning.
- TSMC is deploying 7 nm in 2017 with multiple patterning; specifically, pitch-splitting, down to 40 nm pitch.
- This 10 nm design rule is considered likely to be realized by multiple patterning, given the difficulty of implementing EUV lithography.
- Hence, multiple patterning with immersion lithography has been deployed for volume manufacturing, while deployment of EUV is expected in 2018 2020.
- The 5 nm node ( 22 nm pitch ) would likewise be expected to use multiple patterning already being developed for immersion lithography.
- It's difficult to find multiple patterning in a sentence. 用multiple patterning造句挺難的
- Current EUV throughput is still more than 3x slower than 193 nm immersion lithography, thus allowing the latter to be extended by multiple patterning.
- Beyond the 5nm node, multiple patterning, even with EUV assistance, would be economically challenging, since the departure from EUV single exposure would drive up the cost even higher.
- Multiple patterning entails the use of many processing steps to form a patterned layer, where conventionally only one lithographic exposure, one deposition sequence and one etch sequence would be sufficient.
- The primary EUV tool maker, ASML, projects EUV at the 5 nm node will require a higher numerical aperture than currently available and multiple patterning to a greater degree than immersion lithography at 20 nm node.
- There is therefore great pressure to deploy an NGL as soon as possible, but the NGL ultimately may be realized in the form of photolithography with more efficient multiple patterning, such as directed self-assembly or aggressive cut reduction.
- If an NGL were deployed for the 5 nm node, both companies would benefit, but company A currently manufacturing at the 28 nm node would benefit much more because it would immediately be able to use the NGL for manufacturing at all design rules from 22 nm down to 7 nm ( skipping all the said multiple patterning ), while company B would only benefit starting at the 5 nm node, having already spent much on extending photolithography from its 22 nm process down to 7 nm.